1N5400_06 Datasheet, PDF (1/4 Pages) ON Semiconductor – Axial−Lead Standard Recovery Rectifiers

WTE
POWER SEMICONDUCTORS
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
1N5400 – 1N5408 ^Pb
3.0A STANDARD DIODE
A
B
A
Mechanical Data
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
C
D
DO-201AD
Dim
Min
Max
A
25.4
—
B
7.20
9.50
C
1.20
1.30
D
4.80
5.30
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T_A = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I_F = 3.0A
@T_A = 25°C
@T_A = 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
1N
5400
1N
5401
1N
5402
1N
5404
1N
5406
1N
5407
1N
5408
Unit
50
100 200 400 600 800 1000
V
35
70
140 280 420 560 700
V
IO
3.0
A
IFSM
VFM
IRM
Cj
R
JA
Tj
TSTG
200
1.0
5.0
100
50
20
-65 to +125
-65 to +150
A
V
µA
pF
°C/W
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1N5400 – 1N5408
1 of 4
© 2006 Won-Top Electronics