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1N4150W Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES
WTE
POWER SEMICONDUCTORS
1N4150W / 1N4151W
SURFACE MOUNT FAST SWITCHING DIODE
Features
! High Conductance
! Fast Switching Speed
A
! Surface Mount Package Ideally Suited for
Automatic Insertion
! For General Purpose Switching Application
C
! Plastic Material – UL Recognition Flammability
Classification 94V-O
B

E
Mechanical Data
! Case: SOD-123, Molded Plastic
! Terminals: Plated Leads Solderable per
J
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.01 grams (approx.)
! Marking: 1N4150W A4
1N4151W A5
Maximum Ratings @TA=25°C unless otherwise specified
D
H
G
SOD-123
Dim Min
Max
A
3.6
3.9
B
2.5
2.8
C
1.4
1.8
D
0.5
0.7
E
—
0.2
G
0.4
—
H
0.95 1.35
J
—
0.12
All Dimensions in mm
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0s
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Pd
RJA
Tj, TSTG
1N4150W
50
1N4151W
Unit
75
V
50
V
35
V
400
300
mA
200
150
mA
4.0
1.0
2.0
0.5
A
410
500
mW
300
K/W
-65 to +150
°C
Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Symbol
1N4150W
1N4151W
Unit
Forward Voltage Drop (Note 4)
VFM
1.0
V
Peak Reverse Leakage Current
@ VR = 50V
IRM
100
50
nA
Typical Junction Capacitance (VR = 0V DC, f = 1.0MHz)
Cj
2.5
2.0
pF
Reverse Recovery Time (Note 2, 3)
trr
4.0
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. 1N4150W: Measured with IF = IR = 200mA, IRR = 0.1 x IR, RL = 100.
3. 1N4151W: Measured with IF = IR = 10mA, IRR = 1.0 x IR, RL = 100.
4. 1N4150W: Measured with IF = 200mA. 1N4151W: Measured with IF = 10mA
2.0
nS
1N4150W / 1N4151W
1 of 2
© 2002 Won-Top Electronics