1N4001_06 Datasheet, PDF (1/4 Pages) Won-Top Electronics – 1.0A STANDARD DIODE

WTE
POWER SEMICONDUCTORS
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
1N4001 – 1N4007 ^Pb
1.0A STANDARD DIODE
A
B
A
Mechanical Data
! Case: DO-41, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.35 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
C
D
DO-41
Dim
Min
Max
A
25.4
—
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T_A = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
1N
4001
50
35
1N
4002
100
70
1N
4003
200
140
1N
4004
400
280
1N
4005
600
420
1N
4006
800
560
1N
4007
1000
700
Unit
V
V
IO
1.0
A
IFSM
VFM
IRM
Cj
R
JA
Tj
TSTG
30
1.0
5.0
50
15
50
-65 to +125
-65 to +150
A
V
µA
pF
°C/W
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1N4001 – 1N4007
1 of 4
© 2006 Won-Top Electronics