1N4001 Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere)

W TE
POWER SEMICONDUCTORS
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.35 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
1N4001 – 1N4007
1.0A SILICON RECTIFIER
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.4
—
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
1N
4001
50
1N
4002
100
1N
4003
200
1N
4004
400
1N
4005
600
1N
4006
800
1N
4007
1000
Unit
V
RMS Reverse Voltage
VR(RMS)
35
70
140 280 420 560 700
V
Average Rectified Output Current
(Note 1)
@T_A = 75°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
30
A
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
VFM
1.0
V
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
5.0
50
µA
Typical Junction Capacitance (Note 2)
Cj
15
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
R
JA
50
K/W
Operating Temperature Range
Tj
-65 to +125
°C
Storage Temperature Range
TSTG
-65 to +150
°C
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1N4001 – 1N4007
1 of 3
© 2002 Won-Top Electronics