1H1_06 Datasheet, PDF (1/4 Pages) Won-Top Electronics – 1.0A ULTRAFAST DIODE

WTE
POWER SEMICONDUCTORS
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
1H1 – 1H8 ^Pb
1.0A ULTRAFAST DIODE
A
B
A
Mechanical Data
! Case: R-1, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.181 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
C
D
R-1
Dim
Min
Max
A
20.0
—
B
2.90
3.50
C
0.53
0.64
D
2.20
2.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol 1H1 1H2 1H3 1H4 1H5 1H6 1H7 1H8 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50 100 200 300 400 600 800 1000
V
VR
RMS Reverse Voltage
VR(RMS)
35
70 140 210 280 420 560 700
V
Average Rectified Output Current
(Note 1)
@T_A = 55°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
30
A
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
VFM
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
Reverse Recovery Time (Note 2)
trr
1.0
1.3
1.7
V
5.0
100
µA
50
75
nS
Typical Junction Capacitance (Note 3)
Cj
20
15
pF
Operating Temperature Range
Tj
-65 to +125
°C
Storage Temperature Range
TSTG
-65 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1H1 – 1H8
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© 2006 Won-Top Electronics