FP2189 Datasheet, PDF (3/12 Pages) List of Unclassifed Manufacturers – high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount

FP2189
1-Watt HFET
The Communications Edge ^TM
Product Information
Application Circuit: 870 – 960 MHz (FP2189-PCB900S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, I_ds = 250 mA, 25 °C
Frequency
MHz 870 915
S21 – Gain
dB 18.9 18.7
S11 – Input Return Loss
dB -24 -21
S22 – Output Return Loss dB -7.6 -8.3
Output P1dB
dBm +30.0 +30.2
Output IP3
(+15 dBm / tone, 1 MHz spacing)
dBm
+42.8
Noise Figure
dB 4.2 4.5
IS-95 Channel Power
@ -45 dBc ACPR
dBm
+24.5
960
18.4
-12
-9.6
+30.0
4.5
P OR T
P=1
Z=50 Ohm
CAP
ID= C 1
C=100 pF
CAP
ID=C15
C=4.7 pF
CAP
ID= C 3
CAP
ID= C 4
CAP
ID=C10
C=100 pF C=1000 pF C=DNP pF
Vds =8V @ 250 mA
-Vgg
CAP
ID=C11
C=1e 5 p F
RES
ID= R 1
R=100 Ohm
CAP
ID=C12
C=DNP pF
CAP
ID=C 8
C=1000 pF
CAP
ID=C13
C=DNP p F
CAP
ID=C 7
C=100 pF
CAP
ID=C 2
C=DNP p F
IND
ID=L 4
L=5.6 nH
IN D
ID=L 1
L=18 nH
SUBCKT
ID=Q1
NE T=" FP2 18 9"
CAP
ID=C 6
C=DNP pF
2
IND
ID=L2
L=5.6 nH
IN D
I D=L 3
L=82 nH
CAP
ID =C9
POR T
P=2
C=10 0 p F _{Z=50 Ohm}
1
CAP
ID=C14
C=DNP pF
RES
ID=R 2
R=10 Ohm
CAP
ID=C 5
C=2 .4 p F
Ref. Desig.
C1, C3, C7, C9, C13
C4, C8
C5
C11
L1
L2, L4
L3
R1
R2
Q1
C2, C6, C10, C12, C14
Bill of Materials
Value Part style
100 pF Chip capacitor
1000 pF Chip capacitor
2.4 pF Chip capacitor
0.1 µF Chip capacitor
18 nH Multilayer chip inductor
5.6 nH Multilayer chip inductor
82 nH Multilayer chip inductor
100 Ω Chip resistor
10 Ω
Chip resistor
FP2189 WJ 1W HFET
Do Not Place
Size
0603
0603
0603
1206
0603
0603
0603
0603
0603
SOT-89
14 mil GETEK^TM ML200DSS (εr = 4.2)
The main microstrip line has a line impedance of 50 Ω.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com
Page 3 of 12 October 2006