FP1189 Datasheet, PDF (3/11 Pages) List of Unclassifed Manufacturers – High Performance ½-Watt HFET(Heterostructure FET)

FP1189
½-Watt HFET
The Communications Edge ^TM
Product Information
Application Circuit: 870 – 960 MHz (FP1189-PCB900S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, I_ds = 125 mA, 25 °C
Frequency
MHz 870 915
S21 – Gain
dB 20.9 20.6
S11 – Input Return Loss
dB -10 -13
S22 – Output Return Loss dB -5.2 -6.0
Output P1dB
dBm +27.5 +27.4
Output IP3
(+12 dBm / tone, 1 MHz spacing)
dBm
+39.9
Noise Figure
dB 2.7 2.7
IS-95 Channel Power
dBm
+21
@ -45 dBc ACPR
960
19.8
-10
-7.6
+27.5
2.6
-Vgg
CAP
ID=C10
C=DNP pF
CAP
ID=C4
C=100 0 p F
CAP
ID=C 3
C=6 8 p F
RES
ID=R 1
R=20 Ohm
POR T
P=1
Z=50 Ohm
CAP
ID=C 1
C=68 pF
IND
ID=L1
L=47 nH
IND
ID=L 4
L=12 nH
CAP
I D=C 2
C=18 pF
RES
ID=R 2
R=10 Ohm
Vds = 8 V @ 125 mA
CAP
ID=C11
C=1e5 pF
CAP
ID=C 8
C=1000 pF
CAP
ID=C 7
C=68 pF
SUBCKT
ID=Q1
NET="FP1189"
CAP
ID=C 6
C=18 pF
2
1
RES
I D=L 2
R=0 Ohm
IND
ID=L3
L=47 nH
CAP
ID =C9
C=68 pF
POR T
P=2
Z=50 Ohm
CAP
ID=C13
C=3.9 pF
CAP
ID=C12
C=DNP pF
CAP
ID=C 5
C=DNP pF
Ref. Desig.
C1, C3, C7, C9
C2, C6
C4, C8
C11
C13
L1, L3
L2
L4
R1
R2
Q1
C5, C12, C10
Bill of Materials
Value Part style
68 pF
Chip capacitor
18 pF
Chip capacitor
1000 pF Chip capacitor
0.1 µF Chip capacitor
3.9 pF Chip capacitor
47 nH Multilayer chip inductor
0Ω
Chip resistor
12 nH Multilayer chip inductor
10 Ω
Chip resistor
20 Ω
Chip resistor
FP1189 WJ 0.5W HFET
Do Not Place
Size
0603
0603
0603
1206
0603
0603
0603
0603
0603
0603
SOT-89
14 mil GETEK^TM ML200DSS (εr = 4.2)
The main microstrip line has a line impedance of 50 Ω.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com
Page 3 of 11 October 2006