FP31QF_06 Datasheet, PDF (1/12 Pages) WJ Communication. Inc. – 2-Watt HFET

FP31QF
2-Watt HFET
The Communications Edge ^TM
Product Information
Product Features
• 50 – 4000 MHz
• 18 dB Gain @ 900 MHz
• +34 dBm P1dB
• +46 dBm Output IP3
• High Drain Efficiency
• Lead free/RoHS-compliant 6mm
28-pin QFN package
• MTTF > 100 years
Applications
• Mobile Infrastructure
• CATV / DBS
• W-LAN / ISM
• RFID
• Defense / Homeland Security
• Fixed Wireless
Product Description
Functional Diagram
The FP31QF is a high performance 2-Watt HFET
(Heterostructure FET) in a low-cost lead-free/RoHS-
compliant 28-pin 6x6 mm QFN (Quad Flatpack, No-
Lead) surface-mount package. This device works
optimally at a drain bias of +9 V and 450 mA to achieve
+46 dBm output IP3 performance and an output power of
+34 dBm at 1-dB compression.
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The FP31QF has an associated MTTF of a
minimum of 100 years at a mounting temperature of 85
°C. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
GND 1
28 27 26
GND 2
GATE / ₃
RF IN
GND 4
GND 5
GND 6
GND 7
8 9 10
Function
Gate /
RF Input
Drain /
RF Output
Ground
25 24 23 22
21 GND
20 GND
19 ^{DRAIN /}
RF OUT
18 GND
17 GND
16 GND
15 GND
11 12 13 14
Pin No.
3
19
All other pins &
backside copper
Specifications
Typical Performance ⁽⁴⁾
DC Parameter
Saturated Drain Current, I_dss
Transconductance, G_m
Pinch Off Voltage, V_p ⁽¹⁾
Units Min
mA
mS
V
Typ
1170
590
-2.0
Max
RF Parameter ⁽²⁾
Operational Bandwidth
Test Frequency
Small Signal Gain
Maximum Stable Gain
Output P1dB
Output IP3 ⁽³⁾
Noise Figure
Units
MHz
MHz
dB
dB
dBm
dBm
dB
Min
50
Typ
800
18
24
+34
+46
3.5
Max
4000
1. Pinch-off voltage is measured when Ids = 4.8 mA.
2. Test conditions unless otherwise noted: T = 25 ºC, VDS = 9 V, IDQ = 450 mA, in a tuned
application circuit with ZL = ZLOPT, ZS = ZSOPT (optimized for output power).
3. 3OIP measured with two tones at an output power of +18 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Parameter
Frequency
Gain
S11
S22
Output P1dB
Output IP3 ⁽³⁾
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
W-CDMA Ch. Power
@ -45 dBc ACLR
Drain Voltage ⁽⁵⁾
Drain Current ⁽⁵⁾
Units
MHz
dB
dB
dB
dBm
dBm
dB
dBm
dBm
V
mA
915
18
-20
-12
+34
+46
3.5
+27.8
Typical
1960 2140
13.5 13
-20 -18
-11 -24
+33.8 +33.2
+46.8 +46.6
4.5 4.6
2450
12
-18
-15
+33.5
+46.8
4.6
+27.3
+25
+9
450
4. Typical parameters represent performance in an application circuit.
5. Empirical measurements showed optimal power performance at a drain voltage = 9 volts at 450 mA.
Because the FP31QF is a discrete device, users can choose their own bias configuration. Performance
may vary from the data shown depending on the biasing conditions. To achieve a minimum 1 million
hours MTTF rating, the biasing condition should maintain a junction temperature below 160 °C over all
operating temperatures. This can be approximated by (drain voltage) x (drain current) x 17.5 °C/W +
(maximum operating temperature).
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
DC Power
RF Input Power (continuous)
Drain to Gate Voltage, V_dg
Junction Temperature
Rating
-40 to +85 °C
-55 to +125 °C
7.5 W
6 dB above Input P1dB
+16 V
+220 °C
Ordering Information
Part No.
FP31QF-F
FP31QF-PCB900
FP31QF-PCB1900
FP31QF-PCB2140
Description
2-Watt HFET
(lead-free/RoHS-compliant 6mm QFN package)
870 – 960 MHz Application Circuit
1930 – 1990 MHz Application Circuit
2110 – 2170 MHz Application Circuit
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com
Page 1 of 12 October 2006