FP2189-RFID Datasheet, PDF (1/13 Pages) WJ Communication. Inc. – 1 - Watt HFET

FP2189
1 - Watt HFET
Product Information
Product Features
• 50 – 4000 MHz
• +30 dBm P1dB
• +43 dBm Output IP3
• High Drain Efficiency
• 18.5 dB Gain @ 900 MHz
• Lead-free/Green/RoHS-
compliant SOT-89 Package
• MTTF >100 Years
Applications
• Mobile Infrastructure
• CATV / DBS
• W-LAN / ISM
• RFID
• Defense / Homeland Security
• Fixed Wireless
Product Description
The FP2189 is a high performance 1-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a drain
bias of +8 V and 250 mA to achieve +43 dBm output IP3
performance and an output power of +30 dBm at 1-dB
compression, while providing 18.5 dB gain at 900 MHz.
The device conforms to WJ Communications’ long history
of producing high reliability and quality components. The
FP2189 has an associated MTTF of greater than 100 years
at a mounting temperature of 85°C and is available in both
the standard SOT-89 package and the environmentally-
friendly lead-free/green/RoHS-compliant and green SOT-
89 package. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
Functional Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Function
Input / Gate
Output / Drain
Ground
Pin No.
1
3
2, 4
Specifications
DC Parameter
Saturated Drain Current, I_dss ⁽¹⁾
Transconductance, G_m
Pinch Off Voltage, V_p ⁽²⁾
Units Min
mA 445
mS
V
Typ
615
280
-2.1
Max
705
RF Parameter ⁽³⁾
Frequency Range
Test Frequency
Small Signal Gain
SS Gain (50 Ω, unmatched)
Maximum Stable Gain
Output P1dB
Output IP3 ⁽⁴⁾
Noise Figure
Drain Bias
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
Min Typ Max
50 - 4000
800
18.5
15
21
24
+30
+43
4.5
+8V @ 250 mA
1. Idss is measured with Vgs = 0 V, V ds = 3 V.
2. Pinch-off voltage is measured when Ids = 2.4 mA.
3. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 250 mA in an application circuit
with ZL = ZLOPT, ZS = ZSOPT (optimized for output power).
4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Performance ⁽⁵⁾
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 ⁽⁴⁾
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
W-CDMA Ch. Power
@ -45 dBc ACLR
Drain Voltage
Drain Current
Units
MHz
dB
dB
dB
dBm
dBm
dB
dBm
V
mA
915
18.7
21
8.3
+30.2
+42.8
4.5
+24.5
Typical
1960
15.6
14.6
12
+30.4
+43.5
3.4
2140
14.4
23
11.5
+30.6
+43.9
4.5
+23.8
+22.2
+8
250
2450
13.0
26
9.6
+31.2
+45.3
5. Typical parameters represent performance in a tuned application circuit.
Absolute Maximum Rating
Ordering Information
Parameter
Operating Case Temperature
Storage Temperature
DC Power
RF Input Power (continuous)
Drain to Gate Voltage, V_dg
Junction Temperature
Rating
-40 to +85 °C
-55 to +125 °C
4.0 W
6 dB above Input P1dB
+14 V
+220° C
Part No.
FP2189
FP2189-G
FP2189-PCB900S
FP2189-PCB1900S
FP2189-PCB2140S
Description
1 -Watt HFET
(leaded SOT-89 Pkg)
1 -Watt HFET
(lead-free/green/RoHS-compliant SOT-89 Pkg)
870 – 960 MHz Application Circuit
1930 – 1990 MHz Application Circuit
2110 – 2170 MHz Application Circuit
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: [phone] • e- mail: [e-mail] • Web site: www.wj.com
September 2004