ECP200D Datasheet, PDF (1/6 Pages) WJ Communication. Inc. – 2 Watt, High Linearity InGaP HBT Amplifier

ECP200D
2 Watt, High Linearity InGaP HBT Amplifier
The Communications Edge ^TM
Product Information
Product Features
• 400 – 2300 MHz
• +33 dBm P1dB
• +51 dBm Output IP3
• 18 dB Gain @ 900 MHz
• +5V Single Positive Supply
• MTTF > 100 Years
• 16-pin 4x4mm Lead-free/Green/
RoHS-compliant QFN Package
Applications
• Final stage amplifiers for Repeaters
• Mobile Infrastructure
Product Description
Functional Diagram
The ECP200D is a high dynamic range driver amplifier
in a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance for various
narrowband-tuned application circuits with up to +51
dBm OIP3 and +33 dBm of compressed 1dB power. It
is housed in an industry standard in a lead-free/
green/RoHS-compliant 16-pin 4x4mm QFN surface-
mount package. All devices are 100% RF and DC
tested.
16 15 14 13
Vref 1
12 N/C
N/C 2
11 RF OUT
RF IN 3
10 RF OUT
N/C 4
9 N/C
5678
The ECP200D is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP200D to maintain high linearity over temperature
and operate directly off a single +5V supply. This
combination makes the device an excellent candidate for
transceiver line cards in current and next generation
multi-carrier 3G base stations.
Function
Vref
RF Input
RF Output
Vbias
GND
N/C or GND
Pin No.
1
3
10, 11
16
Backside Paddle
2, 4-9, 12-15
Specifications ⁽¹⁾
Typical Performance ⁽⁴⁾
Parameter
Units
Operational Bandwidth
MHz
Test Frequency
MHz
Gain
dB
Input Return Loss
dB
Output Return Loss
dB
P1dB
Output IP3 ⁽²⁾
dBm
dBm
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range, Icc ⁽³⁾
dBm
dBm
dB
mA
Device Voltage, Vcc
V
Min
400
9
+32
+47
700
Typ
2140
10
20
6.8
+33.2
+48
+27.5
+25.3
7.7
800
+5
Max
2300
900
1. Test conditions unless otherwise noted: 25 ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin
1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
22mA of current when used with a series bias resistor of R1=15Ω. (ie. total device current
typically will be 822 mA.)
Parameter
Frequency
S21 – Gain
S11 – Input R.L.
S22 – Output R.L.
P1dB
Output IP3
IS-95A Channel Power
@ -45 dBc ACPR
wCDMA Channel Power
@ -45 dBc ACLR
Noise Figure
Device Bias ⁽³⁾
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
900 1960 2140
18
11
10
-18
-19
-20
-11 -6.8 -6.8
+33 +33.4 +33.2
+49 +51 +48
+27 +27.5
+25.3
8.0
7.3
7.7
+5 V @ 800 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 °C.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85 °C
-65 to +150 °C
+28 dBm
+8 V
1400 mA
8W
+250 °C
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
ECP200D-G
ECP200D-PCB900
ECP200D-PCB1960
ECP200D-PCB2140
Description
2 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package)
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com
Page 1 of 6 April 2006