ECP103 Datasheet, PDF (1/5 Pages) WJ Communication. Inc. – 1 Watt, High Linearity InGaP HBT Amplifier

ECP103
1 Watt, High Linearity InGaP HBT Amplifier
The Communications Edge ^TM
Product Information
Product Features
x 2300 - 2700 MHz
x +30.5 dBm P1dB
x +46 dBm Output IP3
x 10 dB Gain @ 2450 MHz
x 9 dB Gain @ 2600 MHz
x Single Positive Supply (+5V)
x Available in SOIC-8 or 16pin
4mm QFN package
Applications
x W-LAN
x RFID
x DMB
x Fixed Wireless
Product Description
The ECP103 is a high dynamic range driver amplifier in
a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve superior performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +30.5 dBm of compressed 1-dB power.
The part is housed in an industry standard SOIC-8 SMT
package. All devices are 100% RF and DC tested.
The ECP103 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP103 to maintain high linearity over temperature and
operate directly off a single +5V supply. This
combination makes the device an excellent candidate for
driver amplifier stages in wireless-LAN, digital
multimedia broadcast, or fixed wireless applications. The
device can also be used in next generation RFID readers.
Functional Diagram
Vref 1
16 15 14
13
12 N/C
N/C 2
11 RF OUT
RF IN 3
10 RF OUT
N/C 4
9 N/C
5678
ECP103D
Vref 1
N/C 2
RF IN 3
N/C 4
8 ^Vbias
7 RF OUT
6 RF OUT
5 N/C
ECP103G
Specifications ⁽¹⁾
Parameter
Units
Operational Bandwidth
MHz
Test Frequency
MHz
Gain
dB
Input Return Loss
dB
Output Return Loss
dB
Output P1dB
Output IP3 ⁽²⁾
dBm
dBm
Noise Figure
dB
Test Frequency
MHz
Gain
dB
Output P1dB
Output IP3 ⁽²⁾
Operating Current Range , Icc ⁽³⁾
dBm
dBm
mA
Device Voltage, Vcc
V
Min
2300
400
Typ
2450
10
18
8
+30.5
+46
6.3
2600
9
+30
+45
450
5
Max
2700
500
1. Test conditions unless otherwise noted: T = 25ºC, Vsupply = +5 V in a tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1
is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
¡
10.8 mA of current when used with a series bias resistor of R1=51 . (ie. total device current
typically will be 461 mA.)
Typical Performance ⁽⁴⁾
Parameter
Frequency
S21 – Gain
S11
S22
Output P1dB
Output IP3
W-CDMA Channel Power
@ -45 dBc ACPR
Noise Figure
Supply Bias ⁽³⁾
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
Typical
2450
2600
10
9
15
15
8
8
30.5
30.0
46
45
22.5
7
7
7
+5 V @ 450 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
¢
Absolute Maximum Rating
Ordering Information
Parameters
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Rating
-40 to +85 qC
-65 to +150 qC
+26 dBm
+8 V
900 mA
5W
Part No.
ECP103D
ECP103G
ECP103D-PCB2450
ECP103D-PCB2650
ECP103G-PCB2450
ECP103G-PCB2650
Description
1 Watt InGaP HBT Amplifier (16p 4mm Pkg)
1 Watt InGaP HBT Amplifier (Soic-8 Pkg)
2450 MHz Evaluation Board
2600 MHz Evaluation Board
2450 MHz Evaluation Board
2600 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: [phone] e-mail: [e-mail] Web site: www.wj.com
October 2004 Rev 1