ECP100D Datasheet, PDF (1/7 Pages) WJ Communication. Inc. – 1 Watt, High Linearity InGaP HBT Amplifier

ECP100D
1 Watt, High Linearity InGaP HBT Amplifier
The Communications Edge ^TM
Product Information
Product Features
Product Description
x 400 – 2300 MHz
x +31.5 dBm P1dB
x +46 dBm Output IP3
x 18 dB Gain @ 900 MHz
x 12 dB Gain @ 1960 MHz
x Single Positive Supply (+5V)
x Lead-free/Green/RoHS-compliant
16pin 4mm QFN package
Applications
x Final stage amplifiers for
Repeaters
x Mobile Infrastructure
x Defense / Homeland Security
The ECP100D is a high dynamic range driver amplifier
in a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve superior performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +31.5 dBm of compressed 1-dB power.
It is housed in an industry standard Lead-
free/Green/RoHS-compliant 16-pin 4x4mm QFN SMT
package. All devices are 100% RF and DC tested.
The product is targeted for use as driver amplifier for
various current and next generation wireless
technologies such as GPRS, GSM, CDMA, W-CDMA,
and UMTS, where high linearity and high power is
required. The internal active bias allows the ECP100D
to maintain high linearity over temperature and operate
directly off a +5 V supply.
Functional Diagram
Vref 1
16 15 14
13
12 N/C
N/C 2
11 RF OUT
RF IN 3
10 RF OUT
N/C 4
9 N/C
5678
Function
Vref
RF Input
RF Output
Vbias
GND
N/C or GND
Pin No.
1
3
10, 11
16
Backside Paddle
2, 4-9, 12-15
Specifications ⁽¹⁾
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 ⁽²⁾
IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz
W-CDMA Channel Power
@ -45 dBc ACPR, 2140 MHz
Noise Figure
Operating Current Range , Icc ⁽³⁾
Device Voltage, Vcc
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
mA
V
Min
400
10
+29
+43.8
400
Typ
2140
11
18
8
+31.5
+45
+25.5
+23
6.3
450
5
Max
2300
500
1. Test conditions unless otherwise noted: T = 25 ºC, Vsupply = +5 V in a tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 10, 11 and 16. It is expected that the current can increase by an additional 90 mA at P1dB.
Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will
¡
pull 10.8 mA of current when used with a series bias resistor of R1=51 . (ie. total device current
typically will be 461 mA.)
Typical Performance ⁽⁴⁾
Parameter
Frequency
S21 – Gain
S11
S22
Output P1dB
Output IP3
IS-95A Channel Power
@ -45 dBc ACPR
W-CDMA Channel Power
@ -45 dBc ACPR
Noise Figure
Supply Bias ⁽³⁾
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
900 1960 2140
18
12
11
-13 -11
-18
-7
-10
-8
+31 +32 +31.5
+46 +46 +45
+25.
5
+25.5
+23
7.0 5.5
6.2
+5 V @ 450 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
¢
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85 qC
-65 to +125 qC
+26 dBm
+8 V
900 mA
5W
+250 qC
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
ECP100D-G
ECP100D-PCB900
ECP100D-PCB1960
ECP100D-PCB2140
Description
1 Watt InGaP HBT Amplifier
(Lead-free/Green/RoHS-compliant 16-pin 4x4mm Pkg.)
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: [phone] e-mail: [e-mail] Web site: www.wj.com
Page 1 of 7 April 2006