ECP052 Datasheet, PDF (1/5 Pages) WJ Communication. Inc. – 1/2 Watt, High Linearity InGaP HBT Amplifier

ECP052
½ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge ^TM
Product Information
Product Features
• 800 – 1000 MHz
• +28.5 dBm P1dB
• +44 dBm Output IP3
• 18 dB Gain @ 900 MHz
• Single Positive Supply (+5V)
• Available in SOIC-8 or 16pin
4mm QFN package
Applications
• Final stage amplifiers for
Repeaters
• Mobile Infrastructure
Product Description
The ECP052 is a high dynamic range driver amplifier in
a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance for various
narrowband-tuned application circuits with up to +44
dBm OIP3 and +28.5 dBm of compressed 1dB power. It
is housed in an industry standard SOIC-8 or 16-pin
4x4mm QFN SMT package. All devices are 100% RF
and DC tested.
The ECP052 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP052 to maintain high linearity over temperature and
operate directly off a single +5V supply. This
combination makes the device an excellent candidate for
transceiver line cards in current and next generation
multi-carrier 3G base stations.
Functional Diagram
Vref 1
16 15 14 13
12 N/C
N/C 2
11 RF OUT
RF IN 3
10 RF OUT
N/C 4
9 N/C
5678
ECP052D
Vref 1
N/C 2
RF IN 3
N/C 4
8 ^Vbias
7 ^{RF OUT}
6 RF OUT
5 N/C
ECP052G
Specifications ⁽¹⁾
Parameter
Units
Operational Bandwidth
MHz
Test Frequency
MHz
Gain
dB
Output P1dB
Output IP3 ⁽²⁾
dBm
dBm
Test Frequency
MHz
Gain
dB
Input Return Loss
dB
Output Return Loss
dB
Output P1dB
Output IP3 ⁽²⁾
dBm
dBm
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
Noise Figure
Operating Current Range, Icc ⁽³⁾
dBm
dB
mA
Device Voltage, Vcc
V
Min
800
15.5
+27
+42.5
15.5
+27
+42.5
200
Typ
850
17
+28
+44
900
17.8
18
7
+28.7
+43
+23
7
250
+5
Max
1000
300
1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 50 mA at P1dB. Pin 1 is used as a
reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 12mA of current when used with a series bias resistor of R1=100Ω. (ie. total device current typically will be 262 mA.)
Absolute Maximum Rating
Ordering Information
Parameters
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Rating
-40 to +85 °C
-65 to +150 °C
+28 dBm
+8 V
400 mA
2W
Part No.
ECP052D
ECP052G
ECP052D-PCB900
ECP052G-PCB900
Description
½ Watt InGaP HBT Amplifier (16p 4mm Pkg)
½ Watt InGaP HBT Amplifier (SOIC-8 Pkg)
900 MHz Evaluation Board
900 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com
August 2004