ECP050D Datasheet, PDF (1/5 Pages) WJ Communication. Inc. – 1/2 Watt, High Linearity InGaP HBT Amplifier

ECP050D
½ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge ^TM
Product Information
Product Features
x 1800 – 2300 MHz
x +28.5 dBm P1dB
x +44 dBm Output IP3
x 14 dB Gain @ 1960 MHz
x +5V Single Positive Supply
x 16-pin 4x4mm lead-free/green/
RoHS-compliant QFN Package
Applications
x Final stage amplifiers for Repeaters
x Mobile Infrastructure
Product Description
Functional Diagram
The ECP050D is a high dynamic range driver amplifier
in a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance for various
narrowband-tuned application circuits with up to +44
dBm OIP3 and +28.5 dBm of compressed 1dB power. It
is housed in an industry standard in a lead-free/
green/RoHS-compliant 16-pin 4x4mm QFN surface-
mount package. All devices are 100% RF and DC tested.
Vref 1
N/C 2
16 15 14
13
12 N/C
11 RF OUT
RF IN 3
10 RF OUT
N/C 4
9 N/C
567 8
The ECP050D is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP050D to maintain high linearity over temperature and
operate directly off a single +5V supply. This
combination makes the device an excellent candidate for
transceiver line cards in current and next generation
multi-carrier 3G base stations.
Function
Vref
RF Input
RF Output
Vbias
GND
N/C or GND
Pin No.
1
3
10, 11
16
Backside Paddle
2, 4-9, 12-15
Specifications ⁽¹⁾
Typical Performance ⁽⁴⁾
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 ⁽²⁾
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range ⁽³⁾
Device Voltage
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
Min
1800
12.5
+26.5
+41
dBm
dB
mA 200
V
Typ
2140
14.4
23
8
+28.5
+42
+22.5
+20
5.3
250
+5
Max
2300
300
1. Test conditions unless otherwise noted. 25 ºC, Vsupply = +5 V in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Parameters
Frequency
Gain
S11
S22
Output P1dB
Output IP3 ⁽²⁾
IS-95A Channel Power
@ -45 dBc ACPR,
wCDMA Channel Power
@ -45 dBc ACLR
Noise Figure
Supply Bias
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
1960
2140
14.3
14.4
-12
-23
-8
-8
+28.3
+28.5
+44
+42
+22.5
+20
5
5.3
+5 V @ 250 mA
¡
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85 qC
-65 to +150 qC
+22 dBm
+8 V
400 mA
2W
+250 qC
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
ECP050D-G
ECP050D-PCB1960
ECP050D-PCB2140
Description
½ Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package)
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: [phone] e-mail: [e-mail] Web site: www.wj.com
Page 1 of 5 April 2006