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| WTPA24A60BW Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Bi-Directional Triode Thyristor | |||
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WTPA24A60BW
Electrical Characteristics (Tc = 25°C unless otherwise specified)
Symbol
Characteristics
IDRM//IRRM
Peak Forward or Reverse Blocking Current
(V DRM=V RRM,)
Tc=25â
Tc=125â
VTM
IGT
VGT
VGD
dV/dt
dIcom/dt
IH
IL
Rd
Forward âOnâ Voltage(Note2) (ITM = 35A Peak @ TA = 25°C)
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 33Ω)
T2+G+
T2+G-
T2-G-
Gate Trigger Voltage (Continuous dc)
(VD =12 Vdc, RL = 33Ω)
T2+G+
T2+G-
T2-G-
Gate threshold voltage(Tj=125â, VD= VDRM , RL = 3.3kΩ)
Critical rate of rise of commutation Voltage (VD=0.67VDRM)
Critical rate of rise On-State voltage(VD=400V,Tj=125â)
Holding Current (IT= 500 mA)
IG=1.2IGT
Dynamic resistance
Note 2. Forward current applied for 1 ms maximum duration, duty cycle
Min Typ. Max Unit
-
-
5
μA
-
-
3
mA
-
- 1.55 V
-
-
50
-
-
50 mA
-
-
50
-
-
1.2
-
-
1.2
V
-
-
1.2
0.2
-
-
V
1000
-
- V/μs
22
-
- A/μs
-
-
80 mA
-
-
100 mA
-
-
16 mΩ
2/5
Steady, keep you advance
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