WTF8A60-S Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Bi-Directional Triode Thyristor

WTF8A60-S
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Symbol
Items
conditions
IDRM
VTM
I^+GT1
I^-GT1
I^-GT3
V^+GT1
V^-GT1
V^-GT3
VGD
(dv/dt)c
IH
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ Gate Trigger Current
Ⅲ
Ⅰ
Ⅱ Gate Trigger Voltage
Ⅲ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
VD=VDRM,Single Phase, Half
Wave TJ=125℃
IT=12A,Inst.Measurement
VD=6V,RL=10Ω
VD=6V,RL=10Ω
TJ=125℃,VD=1/2VDRM
TJ=125℃,[di/dt]c=-4.0A/ms,
V_D=2/3V_DRM
Ratings
Unit
Min Typ Max
-
-
2.0 mA
-
-
1.4
V
-
-
30
-
-
30 mA
-
-
30
-
-
1.5
-
-
1.5
V
-
-
1.5
0.2
-
-
V
10
-
- V/µs
-
20
-
mA
2/5
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