WCP25C60 Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon Controlled Rectifiers

WCP25C60
Electrical Characteristics (TC=25℃,unless otherwise noted)
Symbol
Parameter
Test Conditions
IDRM Repetitive Peak Off-State Current
VAK=VDRM
TC=25℃
TC=125℃
Value
Min Typ Max
-
-
5
-
-
2
Units
μA
mA
VTM
Peak On-State Voltage (1)
ITM=38A, tp=380㎲
-
1.3 1.6
V
IGT
Gate Trigger Current (2)
VD=12V,RL=30Ω
TC=25℃
3
-
VGT
Gate Trigger Voltage (2)
VD=12V,RL=30Ω
TC=25℃
-
-
VGD
Non-Trigger Gate Voltage (1)
VD=VDRM ,RL=3.3KΩ
TJ=125℃
0.2
-
Linear slope up to
dv/dt
Critical Rate of Rise Off-State Voltage VD=2/3VDRM, gate open
800
-
TJ=125℃
IH
Holding Current
IT=500mA, Gate Open
-
-
TC=25℃
25
mA
1.3
V
-
V
-
V/㎲
50
mA
IL
Dynamic resistance
IG=1.2IGT
60
mA
*Notes:
1 Pulse Width ≤1.0ms,Duty cycle≤1%
2 RGK Current is not Included in measurement.
2/5
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