WBP13009-K Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast- Switching NPN Power Transistor

WBP13009-K
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
VCEO(sus)
V_CE(sat)
Collector-Emitter Breakdown Voltage
Collector -Emitter Saturation Voltage
Ic=10mA,Ib=0
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=12A,Ib=3.0A
Ic=8.0A,Ib=1.6A
Tc=100℃
Value
Units
Min Typ Max
400
-
-
V
0.5
-
-
2.0
V
2.5
-
-
2.0
V
V_BE(sat)
Base -Emitter Saturation Voltage
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=8.0A,Ib=1.6A
Tc=100℃
-
-
1.2
V
1.6
-
-
1.5
V
I_CBO
Collector -Base Cutoff Current
(Vbe=-1.5V)
Vcb=700V
Vcb=700V,Tc=100℃
1.0
-
-
mA
5.0
h_FE
DC Current Gain
Resistive Load
ts
Storage time
tf
Fall Time
Inductive Load
ts
Storage Time
tf
Fall Time
Vce=5V,Ic=5.0A
Vce=5V,Ic=8.0A
8
-
40
5
-
40
V_CC=125V,Ic=6.0A
I_B1=1.6A,I_B2=-1.6A
T_P=25µs
1.5 3.0
µs
0.17 0.4
V_CC=15V,Ic=5A
I_B1=1.6A,Vbe(off)=5V
- 0.8 2.0
L=0.35mH,Vclamp=300 ^{- 0.04 0.1}
µs
V
Inductive Load
ts
Storage Time
tf
Fall Time
V_CC=15V,Ic=1A
I_B1=0.4A,Vbe(off)=5V
- 0.8 2.5
L=0.2mH,Vclamp=300V ^{- 0.05 0.15}
µs
Tc=100℃
Note:
Pulse Test : Pulse Width300,Duty cycle 2%
2/5
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