WBN13002LD Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast -Switching NPN Power Transistor

WBN13002LD
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
VCEO(sus)
VCE(sat)
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
VBE(sat)
ICBO
ICEO
IEBO
hFE
ts
tf
fT
Base -Emitter Saturation voltage
Collector- Base Cutoff Current
Collector- Emitter Cutoff Current
Emitter- Base Cutoff Current
DC Current Gain
Storage Time
Fall Time
Current Gain Bandwidth Product
Ic=10mA,Ib=0
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
Vcb=350V, Ie=0
Vce=200V, Ib=0
Veb=7V, Ic=0
Vce=5V,Ic=0.2A
Vce=5V,Ic=1.0A
VCC=24V,Ic=0.5A
IB1=-IB2=0.1A
Vce=10v,Ic=0.5A
Value
Min Typ Max
200 -
-
1.0
-
- 1.5
1.0
-
-
1.5
-
- 100
-
- 50
-
- 10
8
- 50
5
-
-
-
1.8 4.0
- 0.21 0.5
4
-
-
Units
V
V
V
µA
µA
µA
µs
MHz
Note:
Pulse Test : Pulse width 300,Duty cycle 2%
2/5
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