SBW13009-S Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

SBW13009-S
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
VCEO(sus)
VCE(sat)
VBE(sat)
IEBO
hFE
ts
tf
fT
Collector -Emitter Breakdown Voltage
Collector -Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Emitter-Base Cutoff Current
DC Current Gain
Storage Time
Fall Time
Current Gain Bandwidth Product
Ic=10mA,Ib=0
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=12A,Ib=3.0A
Ic=8.0A,Ib=1.6A
Tc=100℃
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=8.0A,Ib=1.6A
Tc=100℃
Veb=9V,Ic=0V
Vce=5V,Ic=5.0A
Vce=5V,Ic=8.0A
VCC=5.0V,Ic=0.5A
(UI9600)
Vce=10V,Ic=0.5A
Value
Min Typ Max
400 -
-
1.0
-
-
1.5
3.0
-
-
2.0
1.2
-
-
1.6
-
-
1.5
-
-
10
10
-
40
6
-
30
4
-
10
-
0.8
4
Units
V
V
V
V
V
uA
µs
MHz
Note :
Pulse Test : Pulse width 300,Duty cycle 2%
2/5
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