SBR13003B3 Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

SBR13003B3
Electrical Characteristics (TC=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
Value
Units
Min Typ Max
400 -
-
V
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
Ic=1.5A,Ib=0.5A
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
0.3
-
- 0.5 V
1.0
1.0
-
-
V
1.2
Collector-Base Cutoff Current
ICBO
(Vbe=-1.5V)
Vcb=700V
Vcb=700V, Tc=100℃
1.0
-
-
mA
5.0
hFE
DC Current Gain
Resistive Load
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
Inductive Load
ts
Storage Time
tf
Fall Time
Vce=2V,Ic=0.5A
Vce=2V, Ic=1.0A
10 - 30
5
-
25
V_CC=125V ,Ic=1A
I_TBp1=₌0₂.₅2_㎲A , I_B2=-0.5A
- 0.2 1.0
㎲
1.5 3.0
0.15 0.4
V_CC=15V ,Ic=1A
I_LB=1=₀0_.3.2₅A_m,_HI_,BV2=_c-_la0_m.5A_p=300V
-
-
1.2 4.0
0.12 0.3
㎲
Inductive Load
ts
Storage Time
tf
Fall Time
V_CC=15V ,Ic=1A
I_LB=1=₀0_.3.2₅A_m,_HI_,BV2=_c-_la0_m.5A_p=300V -
2.4 5.0
㎲
Tc=100℃ ^{- 0.15 0.4}
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
.