SBR13003B Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast -Switching NPN Power Transistor

SBR13003B
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Symbol
Parameter
Value
Test Conditions
Min Typ Max
VCEO(sus)
Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
400 -
-
Ic=0.5A,Ib=0.1A
0.3
VCE(sat)
Collector -Emitter Saturation Voltage Ic=1.0A,Ib=0.25A
Ic=1.5A,Ib=0.5A
-
-
0.5
1.0
VBE(sat)
Base -Emitter Saturation Voltage
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
1.0
-
-
1.2
Collector -Base Cutoff Current
Vcb=700V
1.0
ICBO
-
-
(Vbe= -1.5v)
Vcb=700V,Tc=100℃
5.0
hFE
DC Current Gain
Vce=2V,Ic=0.5A
Vce=2V,Ic=1.0A
10
-
30
5
-
25
Resistive Load
ton
Turn -on Time
ts
Storage Time
tf
Fall Time
VCC=125V,Ic=1A
IB1=0.2A,IB2= -0.5A
TP=25µs
0.2 1.0
-
1.5 3.0
0.15 0.4
Inductive Load
ts
Storage Time
tf
Fall Time
Inductive Load
ts
Storage Time
tf
Fall Time
VCC=15V,Ic=1A
-
1.2 4.0
IB1=0.2A,IB2= -0.5A
L=0.35mH,Vclamp=
-
0.12 0.3
300V
VCC=15V,Ic=1A
-
2.4 5.0
IB1=0.2A,IB2= -0.5A
L=0.35mH,Vclamp=
-
0.15 0.4
300V
Tc=100℃
Units
V
V
V
mA
µs
µs
µs
Note :
Pulse Test : Pulse width 300,Duty cycle 2%
2/5
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