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| SBP13007A Datasheet, PDF (2/5 Pages) SemiWell Semiconductor – High Voltage Fast-Switching NPN Power Transistor | |||
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SBP13007A
Electrical Characteristics (TC=25â unless otherwise noted)
Symbol
Parameter
Test Conditions
Value
Units
Min Typ Max
VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
400 -
-V
VCE(sat)
VBE(sat)
ICBO
hFE
ts
tf
ts
tf
ts
tf
Collector-Emitter Saturation Voltage
Ic=2.0A,Ib=0.4A
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=2.0A
0.5
-
- 1.0 V
2.5
Base-Emitter Saturation Voltage
Ic=5.0A,Ib=1.0A
Tc=100â
Ic=2.0A,Ib=0.4A
Ic=5.0A,Ib=1.0A
Ic=5.0A,Ib=1.0A
Tc=100â
-
- 2.5 V
1.2
-
-
V
1.6
-
- 1.5 V
Collector-Base Cutoff Current
(Vbe=-1.5V)
Vcb=700V
Vcb=700V, Tc=100â
1.0
-
-
mA
5.0
DC Current Gain
Resistive Load
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Vce=5V,Ic=2.0A
Vce=5V, Ic=5.0A
VCC=125V , Ic=5.0A
ITBp1==12.50ã²A ,
IB2=-1.0A
10 - 40
5
-
40
-
1.5 3.0 ã²
0.17 0.4
VCC=15V ,Ic=5A
IB1=1.0A , IB2=-2.5A
L=0.35mH,Vclamp=300V
- 0.8 2.0 ã²
- 0.06 0.12
VCC=15V ,Ic=1A
IB1=0.4A , IB2=-1.0A
-
L=0.35mH,Vclamp=300V
1.0 3.0 ã²
Tc=100â - 0.07 0.15
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
.
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