SBP13007-K Datasheet, PDF(2/5 Page) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

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SBP13007-K Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast-Switching NPN Power Transistor

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SBP13007-K

Electrical Characteristics (TC=25â unless otherwise noted)

Symbol

Parameter

Test Conditions

Value

Units

Min Typ Max

VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0

400 -

-V

VCE(sat)

VBE(sat)

ICBO

Ic=2.0A,Ib=0.4A

Ic=5.0A,Ib=1.0A

Collector-Emitter Saturation Voltage Ic=8.0A,Ib=2.0A

Ic=5.0A,Ib=1.0A

Tc=100â

Ic=2.0A,Ib=0.4A

Base-Emitter Saturation Voltage

Ic=5.0A,Ib=1.0A

Tc=100â

Collector-Base Cutoff Current

(Vbe=-1.5V)

Vcb=700V

Vcb=700V, Tc=100â

1.0

- 1.5 V

2.0

- 2.5 V

1.2

1.6

- 1.5 V

1.0

5.0

hFE

DC Current Gain

Resistive Load

Storage Time

Fall Time

Inductive Load

Storage Time

Fall Time

Inductive Load

Storage Time

Fall Time

Vce=5V,Ic=2.0A

Vce=5V, Ic=5.0A

VCC=125V , Ic=5.0A

IB1=1.0A , IB2=-1.0A

Tp=25ã²

8 - 40

5 - 40

1.5 3.0 ã²

0.17 0.4

VCC=15V ,Ic=5A

IB1=1.0A , IB2=-2.5A

L=0.35mH,Vclamp=300V

- 0.8 2.0 ã²

- 0.06 0.12

VCC=15V ,Ic=1A

IB1=0.4A , IB2=-1.0A

L=0.35mH,Vclamp=300V

1.0 3.0

ã²

Tc=100â - 0.07 0.15

Note:

Pulse Test : Pulse width 300, Duty cycle 2%

2/5

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