SBP13003D Datasheet, PDF (2/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – High Voltage Fast -Switching NPN Power Transistor

SBP13003D
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
IEBO
VCEO(SUS)
VCE(sat)
VBE(sat)
hFE
ts
tf
fT
VF
COB
Emitter Cut-off Current
VBE=9V
Collector-Emitter Sustaining Voltage IB=0,IC=10mA
Collector -Emitter Saturation Voltage
IC=1.0A,IB=0.2A
IC=2.0A,IB=0.5A
IC=4.0A,IB=1.0A
Base -Emitter Saturation Voltage
IC=1.0A,IB=0.2A
IC=2.0A,IB=0.5A
DC Current Gain
IC=500A,VCE=5V
IC=1mA,VCE=5V
Storage Time
Fall Time
IC=0.5A,VCC=5V
(UI9600A)
Current Gain Bandwidth Product
IC=0.5A,VCE=10V
Diode Forward Voltage
IF=2A
Output Capacitance
IC=0.5A,VCB=10V
Min
-
400
-
-
10
9
-
4
-
-
Value
Typ Max
-
20
-
-
0.5
-
0.6
1.0
1.2
-
1.6
40
-
-
4
-
0.8
-
-
-
2
21
Units
µA
V
V
V
µs
MHz
V
pF
Note:
Pulse Test :Pulse width 300, Duty cycle 2%
2/5
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