SBN13003A Datasheet, PDF (2/5 Pages) SemiWell Semiconductor – High Voltage Fast-Switching NPN Power Transistor

Electrical Characteristics(Tc=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
VCEO(sus) Collector-Emitter Breakdown Voltage
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
ICBO
hFE
ton
ts
tf
ts
tf
ts
tf
Base -Emitter Saturation voltage
Collector Base Cutoff Current
(Vbe=-1.5v)
DC Current Gain
Resistive Load
Turn-on Time
Storage time
Fall Time
Inductive Load
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Ic=10mA,Ib=0
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
Ic=1.5A,Ib=0.5A
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
Vcb=700V
Vcb=700V,Tc=100℃
Vce=2V,Ic=0.5A
Vce=2V,Ic=1.0A
VCC=125V,Ic=1A
IB1=0.2A,IB2=-0.5A
Tp=25µs
VCC=15V,Ic=1A
IB1=0.2A,IB2=-0.5A
L=0.35mH,Vclamp=300V
VCC=15V,Ic=1A
IB1=0.2A,IB2=-0.5A
L=0.35mH,Vclamp=300V
Tc=100℃
SBN13003A
Value
Min Typ Max
400 -
-
0.3
0.5
-
-
1.0
1.0
-
-
1.2
1.0
-
5.0
10
- 30
5
- 25
Units
V
V
V
mA
0.25 1.0
µs
- 1.32 3.0
0.23 0.4
-
1.2 4.0
µs
- 0.12 0.3
-
1.8 5.0
µs
- 0.16 0.4
Note:
Pulse Test : Pulse width 300,Duty cycle 2%
2/5
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