K2837B Datasheet, PDF (2/7 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon N-Channel MOSFET

Electrical Characteristics(Tc=25℃)
Characteristics
Symbol Test Condition
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
IGSS
V(BR)GSS
IDSS
VGS=±25V,VDS=0V
IG=±10 µA,VDS=0V
VDS=500V,VGS=0V
VDS=400V,Tc=125℃
Drain -source breakdown voltage
Breakdown voltage Temperature
coefficient
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
V(BR)DSS
△BVDSS/
△TJ
VGS(th)
RDS(ON)
gfs
Ciss
Crss
Coss
tr
ton
tf
toff
Qg
Qgs
Qgd
ID=10 mA,VGS=0V
ID=250µA,Referenced
to 25℃
VDS=10V,ID=1mA
VGS=10V,ID=9A
VDS=40V,ID=9A
VDS=25V,
VGS=0V,
f=1MHz
VDD=250V,
ID=18A
RG=25Ω
(Note4,5)
VDD=400V,
VGS=10V,
ID=18A
(Note4,5)
Min
-
±30
-
500
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
K2837B
Type
-
-
-
-
Max
±100
-
1
10
-
Unit
nA
V
µA
V
0.53
-
V/℃
-
5.0
V
0.16 0.19
Ω
22
-
S
3500 4500
55
70
pF
520
670
250
500
80
170
ns
155
320
200
400
90
120
nC
23
-
44
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
-
-
-
24
A
Pulse drain reverse current
IDRP
-
-
-
96
A
Forward voltage(diode)
VDSF
IDR=24A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=24A,VGS=0V,
-
400
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
4.3
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=3.4mH IAS=24A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤24A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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