K2698 Datasheet, PDF (2/7 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon N-Channel MOSFET

Electrical Characteristics(Tc=25℃)
Characteristics
Symbol Test Condition
Gate leakage current
IGSS
VGS=±25V,VDS=0V
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
Drain cut -off current
IDSS
VDS=500V,VGS=0V
Drain -source breakdown voltage
Breakdown voltage Temperature
coefficient
V(BR)DSS
△BVDSS/
△TJ
ID=10 mA,VGS=0V
ID=250µA,Referenced
to 25℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=1mA
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=9A
Forward Transconductance
gfs
VDS=40V,ID=9A
Input capacitance
Ciss
VDS=25V,
Reverse transfer capacitance
Output capacitance
Crss
Coss
VGS=0V,
f=1MHz
Switching time
Rise time
Turn-on time
Fall time
tr
VDD=250V,
ton
ID=18A
tf
RG=25Ω
Turn-off time
toff
(Note4,5)
Total gate charge(gate-source
plus gate-drain)
VDD=400V,
Qg
VGS=10V,
Gate-source charge
Gate-drain("miller") Charge
Qgs
ID=18A
Qgd
(Note4,5)
Min
-
±30
-
500
-
3
-
-
-
-
-
-
-
-
-
-
-
-
K2698
Type
-
-
-
-
Max
±10
-
100
-
Unit
nA
V
µA
V
0.5
-
V/℃
-
5
V
0.23 0.27 Ω
16
-
S
2530 3290
11
14.3 pF
300
390
40
90
150
310
ns
95
200
110
230
42
55
nC
12
-
14
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
-
-
-
18
A
Pulse drain reverse current
IDRP
-
-
-
72
A
Forward voltage(diode)
VDSF
IDR=18A,VGS=0V
-
-
1.4
V
Reverse recovery time
Reverse recovery charge
trr
IDR=18A,VGS=0V,
Qrr
dIDR / dt =100 A / µs
-
500
-
ns
-
5.4
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=5.2mH IAS=18A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤18A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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