K2611S Datasheet, PDF (2/7 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon N-Channel MOSFET

Electrical Characteristics(Tc=25℃)
K2611S
Characteristics
Symbol Test Condition Min Type Max Unit
Gate leakage current
IGSS
VGS=±30V,VDS=0V
-
-
±10
nA
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
±30
-
-
V
Drain cut -off current
IDSS
VDS=720V,VGS=0V
-
-
100
µA
Drain -source breakdown voltage
V(BR)DSS ID=10mA,VGS=0V
900
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=1mA
3
-
5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=4.5A
-
1.1
1.35
Ω
Forward Transconductance
gfs
VDS=15V,ID=4.5A
3.0
7.0
-
S
Input capacitance
Ciss
VDS=25V,
-
2040
-
Reverse transfer capacitance
Output capacitance
Crss
Coss
VGS=0V,
f=1MHz
-
45
-
pF
-
190
-
Rise time
tr
VDD=400V,
-
25
-
Switching time
Turn-on time
Fall time
Turn-off time
ton
ID=9A
tf
RG=100Ω
-
60
-
ns
-
20
-
toff
(Note4,5) _-
95
-
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
VDD=400V,
Qg
VGS=10V,
Qgs
ID=9A
-
58
-
nC
-
32
-
Qgd
(Note4,5) _-
26
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
-
-
-
9
A
Pulse drain reverse current
IDRP
-
-
-
27
A
Forward voltage(diode)
VDSF
IDR=9A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=9A,VGS=0V,
-
1.6
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
20
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=15mH IAS=9A,VDD=90V,RG=25Ω,Starting TJ=25℃
3.ISD≤9A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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