WTPB4A60SW Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Bi-Directional Triode Thyristor

WTPB4A60SW
Bi-Directional Triode Thyristor
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 4 A )
◆ Low On-State Voltage (1.6V(Typ.) @ I_TM)
◆ High Commutation dv/dt
General Description
Standard gate triggering Triac is suitable for direct coupling to
TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
Absolute Maximum Ratings (T_J= 25°C unless otherwise specified)
Symbol
Parameter
Condition
Ratings Units
V_DRM/VRRM
I
T(RMS)
I
TSM
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I²t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
I2t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
T = 110 °C
J
One cycle, Peak value, non-
repetitive full cycle
50Hz
60Hz
T = 125 °C
J
T = 125 °C
J
600
V
4.0
A
30
A
31
5.1
A2s
5
W
1
W
4.0
A
7.0
V
-40~+150 ℃
-40~+150 ℃
Thermal Characteristics
Symbol
Parameter
R_θJc
Thermal Resistance Junction to Case(DC)
R_θJA
Thermal Resistance Junction to Ambient(DC)
Value
2.6
60
Units
℃/W
℃/W
Jan 2009. Rev. 0
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T02-1