WTPB16A60SW Datasheet, PDF (1/6 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Sensitive Gate Bi-Directional Triode Thyristor

WTPB16A60SW
Sensitive Gate
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage: 600V
■ R.M.S On-State Current(I_T(RMS)=16A
■ Low on-state voltage: V_TM=1.55V(Max.)@ I_T=22.5A
■ High Commutation dV/dt.
■Halogen free(WTPB16A60SW-HF)
General Description
General purpose swiTJhing and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
Symbol
Parameter
Value Units
V_DRM/V_PRM
I_T(RMS)
I_TSM
I²t
Peak Repetitive Forward Blocking Voltage(gate open) (Note 1)
Forward Current RMS (All Conduction Angles, TJ=58℃)
Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)
Circuit Fusing Considerations (tp= 10 ms)
600
V
16
A
160/168
A
144
A²s
P_GM
Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us)
5
W
P_G(AV)
dI/dt
I_FGM
Average Gate Power — Forward, (Over any 20ms period)
Critical rate of rise of on-state current
I_TM = 20A; I_G = 200mA; dI_G/dt = 200mA/µs
T_J=125℃
Peak Gate Current — Forward, T_J = 125°C (20 µs, 120 PPS)
1
W
50
A/μs
4
A
V_RGM
Peak Gate Voltage — Reverse, T_J= 125°C (20 µs, 120 PPS)
10
V
T_J,
Junction Temperature
-40~125
℃
T_stg
Storage Temperature
-40~150
℃
Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may
swiTJh to the on-state. The rate of rise of current should not exceed 15A/us.
Thermal Characteristics
Symbol
Parameter
R_QJC
R_QJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
-
-
1.6
-
-
60
Units
℃/W
℃/W
Rev. C Nov.2008
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T01-3