WTPA12A80CW Datasheet, PDF (1/6 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Sensitive Gate Bi-Directional Triode Thyristor

Features
� Repetitive Peak off -State Voltage:800V
� R.M.S On-State Current(IT(RMS)=12A)
� Low On-State Voltage (1.55V(Max.)@ITM
� High Commutation dv/dt
� Halogen free(WTPA12A80CW-HF)
WTPA12A80CW
Sensitive Gate
Bi-Directional Triode Thyristor
General Description
General purpose switching and phase control applications .These devices
are intented to be interfaced directly to miro-Controllers,logic integrated
circuits and other low power gatetrigger circuits such as fan speed and
temperature modulation control,lighting control and static switching relay.
By using an internal ceramic pad, the WTPA series provides voltage
insulated tab (rated at 2500V RMS) complying with UL standards (file
ref.:E347423)
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
symbol
Parameter
Ratings Units
VDRM/VPRM Peak Repetitive Forward Blocking Voltage(gate open) (Note1)
800
V
IT(RMS) Forward Current RMS(All Conduction Angles, TJ=58℃)
12
A
ITSM
Peak Forward Surge Current, (full Cycle, Sine Wave,50/60Hz)
120/126
A
I²t
Circuit Fusing Considerations (tp=10ms)
100
A²s
PGM
Peak Gate Power —Forward,(TJ=58℃,Pulse With≤1.0us)
5
W
PG(AV) Average Gate Power —Forward,(Over any 20ms period)
1.0
W
Critical rate of rise of on-state current
dI/dt
ITM=20A;IG=200mA;dIG/dt=200mA/µs
TJ=125℃
50
A/µs
IFGM
Peak Gate Current—Forward,TJ=125℃(20µs,120PPS)
4
A
VRGM
Peak Gate Voltage—Reverse,TJ=125℃(20µs,120PPS)
10
V
TJ
Junction Temperature
-40~125
℃
Tstg
Storage Temperature
-40~150
℃
Note1.Although not recommended off -state voltages up to 800v ,may be applied with out damage, but the TRIAC
may swiTJh to the on-state .the rate of rise of current should not exceed 15A/us.
Thermal Characteristics
Symbol
Parameter
RÓ¨JC
Thermal Resistance Junction to case
RÓ¨JA
Thermal resistance Junction to Ambient
Value
2.3
60
Units
℃/W
℃/W
Rev.A May.2011
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