WTN1A80 Datasheet, PDF (1/4 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Bi-Directional Triode Thyristor

Features
■ Repetitive Peak off-State Voltage:800V
■ R.M.S On-State Current(IT(RMS)=1A
■ Low on-state voltage: VTM=1.2(typ.)@ ITM
■ Low reverse and forward blocking current:
IDRM=500uA@TC=125℃
■ Low holding current: IH=4mA (typ.)
■ High Commutation dV/dt.
WTN1A80
Bi-Directional Triode Thyristor
General Description
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
symbol
Parameter
condition
VDRM
IT(RMS)
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Tc=86℃
ITSM
Surge On-State Current
I²t
I²t
Full sine wave, 20/16.7ms
PGM
Peak Gate Power Dissipation
PG(AV) Average Gate Power Dissipation
IGM
Peak Gate Current
VGM
Peak Gate Voltage
TJ
Operating Junction Temperature
TSTG Storage Temperature
Ratings
800
1
12.5/13.8
1.28
5.0
0.5
2.0
5
125
-40~150
Units
V
A
A
A²s
W
W
A
V
℃
℃
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case
Value Units
60
℃/W
Rev.A Aug.2011
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