WTF16A60-S Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Bi-Directional Triode Thyristor

Features
� Repetitive Peak off -State Voltage:600V
� R.M.S On-State Current(IT(RMS)=16A)
� Isolation voltage(VISO=1500V AC)
� High Commutation dv/dt
WTF16A60-S
Bi-Directional Triode Thyristor
General Description
This device is fully isolated package suitable for AC switching
application,phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.This device is approved to comply with applicable
requirements by Underwriters Laboratories Inc.
By using an internal ceramic pad, the TO220F series provides
voltage insulated tab (rated at 2500V RMS) complying with UL
standards (file ref.:E347423)
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
symbol
Parameter
Ratings Units
VDRM
IT(RMS)
Peak Repetitive Forward Blocking Voltage(gate open) (Note1)
Forward Current RMS(All Conduction Angles, TJ=68℃)
600
V
16
A
ITSM
Peak Forward Surge Current, (1/2 Cycle, Sine Wave,50/60Hz)
155/170
A
I²t
Circuit Fusing Considerations (tp=10ms)
120
A²s
PGM
Peak Gate Power —Forward,(TC=68℃,Pulse With≤1.0us)
5.0
W
PG(AV)
IFGM
VRGM
TJ
Tstg
Average Gate Power —Forward,(Over any 20ms period)
Peak Gate Current—Forward,TJ=125℃(20µs,120PPS)
Peak Gate Voltage—Reverse,TJ=125℃(20µs,120PPS)
Junction Temperature
Storage Temperature
0.5
W
2.0
A
10
V
-40~125
℃
-40~150
℃
Mass
2.0
g
Note1.Although not recommended off -state voltages up to 800v ,may be applied with out damage, but the TRIAC may
switch, to the on-state .the rate of rise of current should not exceed 3A/us.
Thermal Characteristics
Symbol
Parameter
RÓ¨JC
Thermal Resistance Junction to case
RÓ¨JA
Thermal resistance Junction to Ambient
Value
3.0
120
Units
℃/W
℃/W
Rev.A Oct.2011
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