WTF12A60-S Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Bi-Directional Triode Thyristor

Features
� Repetitive Peak off -State Voltage:600V
� R.M.S On-State Current(IT(RMS)=12A)
� Isolation voltage(VISO=1500V AC)
� High Commutation dv/dt
WTF12A60-S
Bi-Directional Triode Thyristor
General Description
General purpose switching and phase control applications .These devices
are intented to be interfaced directly to mirocontrollers,logic integrated
circuits and other low power gate trigger circuits such as fan speed and
temperature modulation control,lighting control and static switching relay.
By using an internal ceramic pad, the TO220F series provides voltage
insulated tab (rated at 2500V RMS) complying with UL standards (file
ref.:E347423)
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
symbol
Parameter
VDRM
Peak Repetitive Forward Blocking Voltage(gate open) (Note1)
IT(RMS) Forward Current RMS(All Conduction Angles, TJ=58℃)
ITSM
Peak Forward Surge Current, (1/2 Cycle, Sine Wave,50/60Hz)
I²t
Circuit Fusing Considerations (tp=10ms)
PGM
Peak Gate Power —Forward,(TC=58℃,Pulse With≤1.0us)
PG(AV) Average Gate Power —Forward,(Over any 20ms period)
IFGM
Peak Gate Current—Forward,TJ=125℃(20µs,120PPS)
VRGM
Peak Gate Voltage—Reverse,TJ=125℃(20µs,120PPS)
TJ
Junction Temperature
Tstg
Storage Temperature
Ratings
600
12
119/130
71
5
0.5
2
10
-40~125
-40~150
Units
V
A
A
A²s
W
W
A
V
℃
℃
Note1.Although not recommended off -state voltages up to 800v ,may be applied with out damage, but the TRIAC may
switch, to the on-state .the rate of rise of current should not exceed 3A/us.
Thermal Characteristics
Symbol
Parameter
RÓ¨JC
Thermal Resistance Junction to case
RÓ¨JA
Thermal resistance Junction to Ambient
Value
3.3
120
Units
℃/W
℃/W
Rev.A Oct.2011
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