WTD6A60S Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Bi-Directional Triode Thyristor

Features
� Repetitive Peak off -State Voltage:600V
� R.M.S On-State Current(IT(RMS)=6A)
� High Commutation dv/dt
� Isolation Voltage (VISO=1500V AC)
WTD6A60S
Bi-Directional Triode Thyristor
General Description
This device fully isolated package suitable for AC switching
application,phase control application such as fan speed and
temperature modulation control,lighting control and static
switching relay. This device is approved to comply with applicable
requirements by Underwriters Laboratories Inc.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
symbol
Parameter
condition
VDRM
IT(RMS)
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Tc=89℃
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz,
Peak,Non-Repetitive
I²t
I²t
PGM
Peak Gate Power Dissipation
PG(AV) Average Gate Power dissipation
IGM
Peak Gate Current
VGM
Peak Gate Voltage
VISO Isolation Breakdown voltage(R.M.S.) A.C 1 minute
TJ
Operating Junction Temperature
TSTG Storage Temperature
Mass
Ratings
600
6.0
60/66
18
3.0
0.3
2.0
10
1500
-40~125
-40~150
2.0
Units
V
A
A
A²s
W
W
A
V
V
℃
℃
g
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case
Value Units
3.8
℃/W
Rev.A Aug.2010
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