WSP30D100 Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon Controlled Rectifiers

WSP30D100
Silicon Controlled Rectifiers
Features
� 30A(2×15A),100V
� VF(max)=0.72V(@TJ=125℃)
� Low power loss,high efficiency
� Common cathode structure
� Guard ring for over voltage protection, High reliability
� Maximum Junction Temperature Range(175℃)
General Description
Dual center tap Schottky rectifiers suited for High frequency
switch power supply and Free wheeling diodes, polarity protection
applications.
Absolute Maximum Ratings
Symbol
VDRM
VDC
IF(AV)
IFSM
TJ
TSTG
Parameter
Repetitive Peak reverse Voltage
Maximum DC blocking Voltage
Average forward current
Per diode
Per device
Surge non repetitive for ward current
Junction Temperature
Storage Temperature
Value
100
100
15
30
275
175
-40~150
Units
V
V
A
A
°C
°C
Thermal Characteristics
Symbol
Parameter
RQJC
Thermal Resistance Junction to Case
Value
Units
Min Typ Max
-
-
1.8 ℃/W
Ordering Information
Order codes
Package
WSP30D100
TO220C
WSP30D100-HW
TO220HW
Marking
P30D100
P30D100
Halogen Free
NO
NO
Packaging
Tube
Tube
Rev.A Nov.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.