WSP20D65 Datasheet, PDF (1/4 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Power Schottky Rectifier

WSP20D65
Power Schottky Rectifier
Features
■ 20A(1×10A),65V
■ V_F(max)=0.68V(@TJ=125℃)
■ Low power loss, high efficiency
■ Common cathode structure
■ Guard ring for over voltage protection, High reliability
■ Maximum Junction Temperature Range(175℃)
General Description
Dual center tap Schottky rectifiers suited for High frequency switch
power supply and Free wheeling diodes, polarity protection applications.
A1
K
A2
TO220
Absolute Maximum Ratings
Symbol
Parameter
V_DRM
V_DC
I_F(RMS)
Repetitive peak reverse voltage
Maximum DC blocking voltage
RMS forward current
I_F(AV)
Average forward current
I_FSM
P_ARM
I_RRM
dv/dt
T_J,
T_stg
Surge non repetitive forward current
Repetitive peak avalanche power
Repetitive peak reverse current
Critical rate of rise of reverse voltage
Junction Temperature
Storage Temperature
per diode
per device
Value
65
65
30
10
20
150
5800
1
10000
175
-40~150
Units
V
V
A
A
A
W
A
V/ns
℃
℃
Thermal Characteristics
Symbol
Parameter
R_QJC
R_QCS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Value
Min Typ Max
-
-
1.9
0.1
-
-
Units
℃/W
℃/W
Rev. C Nov.2008
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T01-3