WSP20D150 Datasheet, PDF (1/4 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon Controlled Rectifiers

WSP20D150
Silicon Controlled Rectifiers
Features
� 20A(2×10A),150V
� VF(max)=0.75V(@TJ=125℃)
� Low power loss,high efficiency
� Common cathode structure
� Guard ring for over voltage protection, High reliability
� Maximum Junction Temperature Range(175℃)
General Description
Dual center tap Schottky rectifiers suited for High frequency
switch power supply and Free wheeling diodes, polarity protection
applications.
Absolute Maximum Ratings
Symbol
VDRM
VDC
IF(RMS)
IF(AV)
IFSM
IRRM
dv/dt
Parameter
Repetitive Peak reverse Voltage
Maximum DC blocking Voltage
RMS forward Current
Average forward current
Per diode
Per device
Surge non repetitive for ward current
Repetitive peak reverse current
Critical rate of rise pf reverse voltage
TJ
Junction Temperature
TSTG
Storage Temperature
Value
150
150
20
10
20
200
1
10000
175
-40~150
Units
V
V
A
A
A
A
V/ns
°C
°C
Thermal Characteristics
Symbol
Parameter
RQJC
Thermal Resistance Junction to Case
Value
Units
Min Typ Max
-
-
2.2 ℃/W
Rev.A May.2011
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