WSP10D100H Datasheet, PDF (1/4 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Power Schottky Rectifier

WSP10D100H
Power Schottky Rectifier
Features
■ 10A(2×5A),100V
■ V_F(max)=0.60V(@TJ=125℃)
■ Low power loss, high efficiency
■ Common cathode structure
■ Guard ring for over voltage protection, High reliability
■ Maximum Junction Temperature Range(175℃)
General Description
Dual center tap Schottky rectifiers suited for High frequency switch
power supply and Free wheeling diodes, polarity protection
applications.
K
A1
K
A2
TO220
Absolute Maximum Ratings
Symbol
Parameter
V_DRM
V_DC
I_F(RMS)
Repetitive peak reverse voltage
Maximum DC blocking voltage
RMS forward current
I_F(AV)
Average forward current
I_FSM
I_RRM
dv/dt
T_J,
T_stg
Surge non repetitive forward current
Repetitive peak reverse current
Critical rate of rise of reverse voltage
Junction Temperature
Storage Temperature
per diode
per device
Value
100
100
10
8
10
180
1
10000
175
-40~150
Units
V
V
A
A
A
A
V/ns
℃
℃
Thermal Characteristics
Symbol
Parameter
R_QJC
R_QCS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Value
Min Typ Max
-
-
1.9
0.3
-
-
Units
℃/W
℃/W
Rev. B Jun.2011
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T02-2