WSP10D100 Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Power Schottky Rectifier

WSP10D100
Power Schottky Rectifier
Features
■ 10A(2×5A),100V
■ V_F(max)=0.70V(@TJ=125℃)
■ Low power loss, high efficiency
■ Common cathode structure
■ Guard ring for over voltage protection, High reliability
■ Maximum Junction Temperature Range(175℃)
General Description
Dual center tap Schottky rectifiers suited for High
frequency switch power supply and Free wheeling
diodes, polarity protection applications.
Absolute Maximum Ratings
Symbol
Parameter
V_DRM
V_DC
Repetitive peak reverse voltage
Maximum DC blocking voltage
I_F(AV)
Average forward current
I_FSM
Surge non repetitive forward current
T_J,
Junction Temperature
T_stg
Storage Temperature
per diode
per device
Value
100
100
5
10
80
175
-40~150
Units
V
V
A
A
℃
℃
Thermal Characteristics
Symbol
Parameter
R_QJC
Thermal Resistance, Junction-to-Case
Ordering Information
Order codes
Package
WSP10D100L
WSP10D100-HW
TO220C
TO220HW
Marking
P10D100L
P10D100
Value
Min Typ Max
-
-
1.9
Units
℃/W
Halogen Free
NO
NO
Packaging
Tube
Tube
Rev. B Sep.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T02-2