WSF10D100 Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Power Schottky Rectifier

WSF10D100
Power Schottky Rectifier
Features
■ 10A(2×5A),100V
■ V_F(max)=0.70V(@TJ=125℃)
■ Low power loss, high efficiency
■ Common cathode structure
■ Guard ring for over voltage protection, High reliability
■ Maximum Junction Temperature Range(175℃)
General Description
Dual center tap Schottky rectifiers suited for High
frequency switch power supply and Free wheeling diodes,
polarity protection applications.
Absolute Maximum Ratings
Symbol
Parameter
V_DRM
V_DC
Repetitive peak reverse voltage
Maximum DC blocking voltage
I_F(AV)
Average forward current
I_FSM
Surge non repetitive forward current
T_J,
Junction Temperature
T_stg
Storage Temperature
per diode
per device
Value
100
100
5
10
80
175
-40~150
Units
V
V
A
A
℃
℃
Thermal Characteristics
Symbol
Parameter
R_QJC Thermal Resistance, Junction-to-Case
Ordering Information
Order codes
Package
WSF10D100L
WSF10D100-HF
TO220F
TO220HF
Marking
F10D100L
F10D100
Value
Min Typ Max
-
-
2.5
Units
℃/W
Halogen Free
NO
NO
Packaging
Tube
Tube
Rev. B Jan.2012
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