WSC10U45 Datasheet, PDF (1/3 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Low VF Schottky Rectifier

WSC10U45
Low VF Schottky Rectifier
Features
■ High cu rrent capab ili ty, l ow f orward vol tage
■ Excelle nt high temperatu re stability
■ Low power loss, and high ef fic iency
■ High Forward Surge C apability
■ Paten ted package techn ology
Applications
■ Switching mode power supply applications
■ Portable equipment battery applications
■ High frequency rectification
■ DC / DC Converter
■ Designed as bypass diodes for solar panel s
TO-277B
Absolute Maximum Ratings (Rating at 25°C amb ient tempe rature unless otherwise specified)
Symbol
Parameter
V_DRM Repetitive peak reverse voltage
V_DC
Ma ximum DC blocking voltage
I _F(AV)
Averageforward current
I _FSM
Surge non repetitive forward current (8.3ms single half sine-wave)
T_J,
Junction Tem p e ra tur e
T _stg
Storage Te mp era tu re
Value
45
45
10
28 0
-40~150
-40~150
Units
V
V
A
A
℃
℃
Thermal Characteristics (Rating at 25°C amb ient tempe rature unless otherwise specified)
Symbol
R _{QJC(Note 2)}
Parameter
Therm al Resistance, Ju nction-to-Case
Value
Min Typ
Units
Max
-
31
-
℃/W
Electrical Characteristics
Characteristics Symbol Test Condition
Min Typ. Max
Reverse leakage
current
Fo rward voltage
drop(Note 1)
I_R
VR = Max.VRRM
I _RRM ＠25° C
-
-
0.3
I _RRM ＠100°C
-
-
20
I_F= 2A
-
0.31
0.3 5
I_F= 8A
V_F
I _F= 10A
-
0.37
0.3 8
-
0.39
0.4 1
I _F= 2A＠100℃
-
0.23
0.2 6
I _F= 10A＠125℃
-
0.353
0.3 8
Unit
mA
mA
V
V
V
V
V
Note 1. Pulse test width PW=300usec , 1% duty cycle
Note 2. Polymi de PCB, 2oz. Copper. Cathode pad dimensions 18.8mm x 14.4mm. Anode pad dimensions 5.6mm x 14.4mm.
WT-S004-Rev.A1 Jul.2013
Copyr ight@Winsemi M icro elec tronic s Co., Ltd., All right reser ved.