WCPA25C60 Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon Controlled Rectifiers

Features
■ Repetitive Peak Off-State Voltage:600V
■ R.M.S On-State Current (IT(RMS)=25A)
■ Low On-State Voltage(1.3V(Typ.)@ITM)
■ Non-isolaed Type
WCPA25C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system.
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
VDRM
IT(AV)
IT(RMS)
ITSM
I²t
Parameter
Condition
Repetitive Peak Off-State Voltage
Average On-State Current
Half Sine Wave:TC=102°C
R.M.S On-State Current
180°conduction Angle
tp=10ms
Non Repetitive Surge Peak on-state Current
tp=8.3ms
I²t for Fusing
t=10ms
di/dt
Critical rate of rise of on-state current
PGM
Forward Peak Gate Power Dissipation
PG(AV)
Forward Average Gate Power Dissipation Over any 20ms period
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Value
600
16
25
300
314
450
50
20
1
5
5
-40~125
-40~150
Units
V
A
A
A
A²s
A/㎲
W
W
A
V
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient
Min
Value
Typ Max
Units
-
-
1.0 ℃/W
-
-
60 ℃/W
Rev.A Oct.2010
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