WCP12C60 Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon Controlled Rectifiers

Features
� Repetitive Peak Off-State Voltage:600V
� R.M.S On-State Current (IT(RMS)=12A)
� Low On-State Voltage(1.4V(Typ.)@ITM)
� Non-isolation Type
WCP12C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
VDRM
IT(AV)
IT(RMS)
ITSM
I²t
di/dt
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge on-state Current
I²t for Fusing
Critical rate of rise of on-state current
Condition
Half Sine Wave:TC=111°C
180°conduction Angle
1/2 Cycle,60Hz,Sine
Wave Non-Repetitive
t=8.3ms
PGM
Forward Peak Gate Power Dissipation
PG(AV)
Forward Average Gate Power Dissipation Over any 20ms period
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Value
600
7.6
12
120
72
50
5
0.5
2
5.0
-40~125
-40~150
Units
V
A
A
A
A²s
A/㎲
W
W
A
V
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient
Value
Units
Min Typ Max
-
-
1.3 ℃/W
-
-
60 ℃/W
Rev.A Oct.2010
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