WCF8C60 Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon Controlled Rectifiers

Features
� Repetitive Peak Off-State Voltage:600V
� R.M.S On-State Current (IT(RMS)=8A)
� Low On-State Voltage(1.4(Typ.)@ITM)
� Isolation Voltage(VISO=1500V AC)
WCF8C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for the
application where requiring high bidirectional blocking voltage capability
and also suitable for over voltage protection ,motor control circuit in
power tool, inrush current limit circuit and heating control system.
By using an internal ceramic pad, the TO220F series provides
voltage insulated tab (rated at 2500V RMS) complying with UL
standards (file ref.:E347423)
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
VDRM/VRRM
IT(AV)
IT(RMS)
ITSM
I²t
di/dt
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current(180° Conduction Angle)
R.M.S On-State Current(180° Conduction Angle)
Non Repetitive Surge Peak on-state Current
I²t Valuefor Fusing
Critical rate of rise of on-state current
ITM=2A;IG=10mA; dIG/dt=100A/µs
(Note(1)
TI =85 °C
TI =85 °C
tp=8.3ms
tp=10ms
tp=8.3ms
TJ=125 °C
Value
600
5
8
73
70
24.5
50
Units
V
A
A
A
A²s
A/㎲
PG(AV)
Average Gate Power Dissipation
TJ=125 °C
1
W
IFGM
Peak Gate Current
TJ=125 °C
4
A
VRGM
Reverse Peak Gate Voltage
TJ=125 °C
5
V
VISO
Isolation Breakdown voltage(R.M..S)
A,C.1minute
1500
V
TJ
Junction Temperature
-40~125
°C
TSTG
Storage Temperature
-40~150
°C
Note1:Although not recommended,off-state Voltages up to 800V may be applied without damage,but the thyristor may
switch to the on-stage.The rate of rise of current should not exceed15A/µs.
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient
Value
Units
Min Typ Max
-
-
20 ℃/W
-
-
70 ℃/W
Rev.A Oct.2010
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