WCD6C60 Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon Controlled Rectifiers

Features
� Repetitive Peak Off-State Voltage : 600V
� R.M.S On-State Current ( IT(RMS)= 6 A )
� Low On-State Voltage (1.4V(Typ.) @ ITM)
� Isolation Voltage(VISO=1500V AC)
WCD6C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system.
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Parameter
Condition
VDRM
IT(AV)
Repetitive Peak Off-State Voltage
Average On-State Current(180°
Conduction Angle)
Tc =110 °C
IT(RMS)
R.M.S On-State Current(180°
Conduction Angle)
Tc =110 °C
ITSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine
WaveNon-Repetitive
I²t
I²t for Fusing
t =10ms
di/dt
Critical rate of rise of on-state current F=60Hz,Tj=125 °C
PGM
Forward Peak Gate Power Dissipation
PG(AV)
Forward Average Gate Power
Dissipation
Tj=125 °C
IFGM
VRGM
Forward Peak Gate Current
Reverse Peak Gate Voltage
VISO
Isolation Breakdown voltage(R.M..S)
A,C.1minute
TJ
Operating Junction Temperature
TSTG
Storage Temperature
Ratings Units
600
V
3.8
A
6
A
66
A
21
A²s
50
A/㎲
5
W
0.5
W
2
A
5.0
V
1500
V
-40~125 °C °C
-40~150 °C °C
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case(DC)
RθJA
Thermal Resistance Junction to Ambient(DC)
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Value
3.12
89
Units
℃/W
℃/W