WCD4C600S Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon Controlled Rectifiers

WCD4C60S
Silicon Controlled Rectifiers
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 4 A )
◆ Low On-State Voltage (1.6V(Typ.) @ ITM)
General Description
Sensitive gate triggering SCR is suitable for the appli cation where
requiring high bidirectional blocking voltage capabili ty and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current lim it circuit and heating control system.
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Param eter
Condition
VDRM
I T(AV)
Repetitive Peak Off-State Voltage
Average On-State Current(180°
Conduction Angle)
Ti =60 °C
Tamb=25 °C
I T(RM S)
R.M.S On-State Current(180°
Conduction Angle)
Ti =60 °C
Tamb=25 °C
I TSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repeti tive
I ²t
I²t for Fusing
t =10ms
di/dt
Critical rate of rise of on-state current F=60Hz,Tj=125 °C
P GM
P G(AV)
Forward Peak Gate Power Dissipation
Forward Average Gate Power
Di ssi pati on
Tj=125 °C
I FGM
Forward Peak Gate Current
TJ
Operating Junction Temperature
T STG
Storage Temperature
Ratings
600
1.35
0.9
4
1.35
33
4.5
50
0.5
0.2
1.2A
-40~125 °C
-40~150 °C
Units
V
A
A
A
A²s
A/㎲
W
W
A
°C
°C
Thermal Characteristics
Sym bol
Param eter
RθJc
Thermal Resistance Junction to Case(DC)
RθJA
Thermal Resistance Junction to Ambient(DC)
Jan 2009 .Rev .0
Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved.
Value
15
100
Units
℃/W
℃/W