WCD10C60 Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon Controlled Rectifiers

Features
� Repetitive Peak Off-State Voltage:600V
� R.M.S On-State Current (IT(RMS)=10A)
� Low On-State Voltage(1.4V(Typ.)@ITM)
� Non-isolation Type
WCD10C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Parameter
Condition
VDRM
Repetitive Peak Off-State Voltage
IT(AV)
Average On-State Current
Half Sine Wave:TC =111 °C
IT(RMS)
R.M.S On-State Current
180°conduction Angle
ITSM
Surge on-state Current
1/2 Cycle,60Hz,Sine Wave
Non-Repetitive
I²t
I²t for Fusing
t=8.3ms
di/dt
Critical rate of rise of on-state current
PGM
Forward Peak Gate Power Dissipation
PG(AV)
Forward Average Gate Power
Dissipation
IFGM
Forward Peak Gate Current
VRGM
Reverse Peak Gate Voltage
TJ
Operating Junction Temperature
TSTG
Storage Temperature
Value
600
6.4
10
110
60
50
5
0.5
2
5.0
-40~125
-40~150
Units
V
A
A
A
A²s
A/㎲
W
W
A
V
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient
Value
Units
Min Typ Max
-
-
1.3 ℃/W
-
-
60 ℃/W
Rev.A Oct.2010
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