STU4A60 Datasheet, PDF (1/5 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Bi-Directional Triode Thyristor

STU4A60
Bi-Directional Triode Thyristor
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 4 A )
◆ Low On-State Voltage (1.6V(Typ.) @ I_TM)
◆ High Commutation dv/dt
General Description
Sensitive gate triggering Triac is suitable for direct coupling to
TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
A1
A2
G
TO-251
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Para
Condition
V_DRM/VRRM
I
T(RMS)
I
TSM
I²t
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
T = 1118 °C
J
50/60Hz, One cycle, Peak value, non-repetitive
I2t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Ratings Units
600
V
4.0
A
18/20
A
1.67
A2s
1.5
W
0.1
W
1.0
A
7.0
V
-40~+150 ℃
-40~+150 ℃
Thermal Characteristics
Symbol
Parameter
R_θJc
Thermal Resistance Junction to Case(DC)
R_θJA
Thermal Resistance Junction to Ambient(DC)
Value
3
75
Units
℃/W
℃/W
Jan 2009. Rev. 0
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